shantou huashan electronic devices co.,ltd . n-channel enhancement mode field effect transistor general description these are n-channel enhancement mode silico n gate power field effect transistors. they are advanced power mosfets design ed, this advanced t echnology has been especially tailored to minimi ze on-state resistance, pr ovide superior switching performance, and withstand hi gh energy pulse in the av alanche and commutation mode . these devices are well suited for hi gh efficiency switch mode power supply, power factor correction, electronic la mp ballast based on half bridge. features ? 12a, 600v(see note), r ds (on) < 0.65 ? @v gs = 10 v ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant maximum ratings ta=25 unless otherwise specified thermal characteristics symbol items to-3p unit rthj-case thermal resistance junction-case max 0.42 /w rthj-amb thermal resistance junction-ambient max 40 /w t stg storage temperature ------------------------------------------------------ - 55~150 t j operating junction temperature -------------------------------------------------- 150 v dss drain-source voltage --- ---------------------- -------------------- -------------600v v gss gate-source voltage --------------------------------------------------------------------------- 30v i d drain current (continuous)(t c =25 ) ----------------------------------------------------------- 12a i dm pulsed drain current (note 1)----------- ------------------------------------------------------ 48a p d maximum power dissipation (t c =25 ) ------------------------------------------------------ 300w derate above 25 ------------------------------------------------------------------------- 2.38w/ e as pulsed avalanche energy (note 2) ----------------------------------------------------------- 960mj i ar avalanche current (note 1) ----------------- ------------------------------------------------------ 12a e ar repetitive avalanche en ergy (note 1) ------------------------------------------------------- 30mj dv/dt peak diode recovery dv/ dt (note 3) ------------------------------------------------------4.0v/ns HFH12N60 to-3p 1- g 2-d 3-s
shantou huashan electronic devices co.,ltd . electrical characteristics ta=25 unless otherwise specified symbol items min. typ. max. unit conditions off characteristics bv dss drain-source breakdown voltage 600 v i d =250 a ,v gs =0v 10 a v ds =600v, v gs =0v i dss zero gate voltage drain current 100 a v ds =480v, v gs =0v,tj=125 i gss gate ? body leakage 100 na v gs = 30v , v ds =0v on characteristics v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d =250 a r ds(on) static drain-source on-resistance 0.65 ? v gs =10v, i d =6a dynamic characteri stics and switching characteristics ciss input capacitance 1760 pf coss output capacitance 182 pf crss reverse transfer capacitance 21 pf v ds = 25 v, v gs = 0v, f = 1.0 mhz t d(on) turn - on delay time 30 ns tr rise time 85 ns t d(off) turn - off delay time 155 ns t f fall time 90 ns v ds = 300v, i d = 12a, r g = 25 ? (note 4,5) qg total gate charge 48 nc qgs gate?source charge 8.5 nc qgd gate?drain charge 21 nc v ds =480v, id =12 a, v gs = 10 v (note 4,5) drain-source diode charact eristics and maximun ratings i s continuous source?drain diode forward current 12 a i sm pulsed drain-source diode forward current 48 a v sd source?drain diode forward on?voltage 1.4 v i s =12a,v gs =0 notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=7.85mh, i as =12.0a, v dd =50v, r g =25 ? ,starting t j =25 3. i sd 12a, di/dt 200a/ s,v dd bvdss, starting t j =25 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature HFH12N60
shantou huashan electronic devices co.,ltd . typical characteristics HFH12N60
shantou huashan electronic devices co.,ltd . typical characteristics HFH12N60
shantou huashan electronic devices co.,ltd . typical characteristics HFH12N60
shantou huashan electronic devices co.,ltd . typical characteristics HFH12N60
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